Extended-drain MOS mirrors

Details Extended-drain MOS mirrors Extended-drain MOS mirrors

1978-09-25

1980-04-22

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330288, 330307, 357 23, 357 41, H03F 316

Patent

active

041997336

ABSTRACT:
An improved current amplifier, of the type having input, output and common terminals and which is subject to having widely dissimilar voltages at its input and output terminals has field-effect master and slave transistors formed in a region of semiconductor substrate having an impurity concentration gradient such that the material resistivity increases in a direction into the substrate and provided with relatively deep drain extensions.

REFERENCES:
patent: 3391311 (1968-07-01), Lin et al.
patent: 3947778 (1976-03-01), Hsiao et al.
patent: 3953807 (1976-04-01), Schade, Jr.
patent: 4015146 (1977-03-01), Aihara
patent: 4064506 (1977-12-01), Cartwright, Jr.

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