Exposure system, exposure method and semiconductor device...

Details Exposure system, exposure method and semiconductor device... Exposure system, exposure method and semiconductor device...

2005-12-21

2009-12-08

Young, Christopher G (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C430S296000, C430S942000

Reexamination Certificate

active

07629092

ABSTRACT:
In performing exposure for forming patterns being fine as well as having great density difference, adequate corrections are to be enabled for suppressing the influence from peripheries of these patterns to be a minimum and for suppressing the dimension variation within the plane of semiconductor substrate or among semiconductor substrates to a minimum. So-called lower-layer corrections are executed, in order to suppress the three-dimensional influence, namely the influence of the film-thickness distribution of a lower-layer structure body lying under a subject film to be processed with a resist. A pattern-correcting portion adjusts the amount of exposure such that it cancels the in-plane film-thickness distribution of the lower-layer structure body in respective exposure regions.

REFERENCES:
patent: 7205078 (2007-04-01), Osawa et al.
patent: 11-329961 (1999-11-01), None

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