Exposure pattern or mask and inspection method and...

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

Reexamination Certificate

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C382S144000, C382S145000, C382S149000

Reexamination Certificate

active

10780667

ABSTRACT:
An exposure pattern or mask inspection and manufacturing method and an exposure pattern or mask are provided which can perform comparison inspection of the exposure pattern or mask with ease and at a high precision. A mask pattern portion for exposing a predetermined pattern by an exposure beam is inspected by disposing a plurality of dummy inspection patterns having the same pattern as at least a part of the mask pattern portion inside and/or outside an area of the mask pattern portion and comparing at least the portion of the mask pattern portion with the dummy inspection pattern portion or portions.

REFERENCES:
patent: 5831272 (1998-11-01), Utsumi
patent: 6855997 (2005-02-01), Suwa
EPL: Electron-beam Proximity Lithography, “Projection Exposure with Variable Axis Immersion Lenses: A High-Throughput Electron Beam Approach to Suboptical Lithography” H.C Pfeiffer, Jpn. J. Appl. Phys. vol. 34 (1995) pp. 6658-6662.
LEEPL: Low Energy Electron-beam Proximity Projection Lithography, Characterization of a Process Development Tool for Ion Projection Lithography, Hans Loeschner, et al, J.Vac. Sci. technol. B19, (2001).

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