Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement
Reexamination Certificate
2007-09-04
2007-09-04
Young, Christopher G. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Including control feature responsive to a test or measurement
C430S296000, C430S312000, C430S328000, C430S394000, C430S396000, C430S942000
Reexamination Certificate
active
11268526
ABSTRACT:
An exposure parameter obtaining method comprising forming a charged reference pattern and a plurality of charged exposure patterns at a surface region of a to-be-exposed insulation substrate by projecting a charged beam with a first incident energy using a reference pattern whose exposure parameter has been known beforehand and all of selected exposure patterns to be corrected, forming electron signal images for the charged reference pattern and the plurality of charged exposure patterns on the basis of charged particles including secondary electrons by scanning the surface of the insulation substrate with a charged beam with a second incident energy lower than the first incident energy, and creating, on the basis of the electron signal images, the exposure parameters including at least one of position, focal point, astigmatism, rotation, and magnification for all of the selected exposure patterns to be corrected.
REFERENCES:
patent: 4670650 (1987-06-01), Matsuzawa et al.
patent: 5831273 (1998-11-01), Someda et al.
patent: 5989759 (1999-11-01), Ando et al.
patent: 5994030 (1999-11-01), Sugihara et al.
patent: 6376136 (2002-04-01), Nakasugi et al.
patent: 6818364 (2004-11-01), Nakasugi
patent: 60-249327 (1985-12-01), None
patent: 6-260401 (1994-09-01), None
patent: 07-022349 (1995-01-01), None
patent: 07-169667 (1995-07-01), None
patent: 10-303125 (1998-11-01), None
patent: 11-162390 (1999-06-01), None
patent: 2000-124115 (2000-04-01), None
patent: 2000-182942 (2000-06-01), None
Nakasugi, T., “Charged Particle Beam Exposure Apparatus and Exposure Method”, U.S. Appl. No. 10/092,161, filed Mar. 7, 2002, Specification—49 pages, and 20 sheets of drawings.
Nakasugi, T., et al., “Pattern Observation Apparatus and Pattern Observation Method”, U.S. Appl. No. 09/669,732, filed Sep. 26, 1999, Specification—54 pages, and 11 sheets of drawings.
Nakasugi, T., et al., “Charged Beam Exposure Method and Charged Beam Exposure Apparatus”, U.S. Appl. No. 09/465,932, filed Dec. 17, 1999, Specification—49 pages, and 12 sheets of drawings.
Nakasugi, T., et al., “Alignment System Using Voltage Contrast Images for Low-Energy Electron-Beam Lithography”, J. Vac. Sci. Technol. B 19(6), pp. 2869-2873, (Nov. 2001).
Notification of Reasons for Rejection mailed Apr. 24, 2007, issued by the Japanese Patent Office, mailed Apr. 24, 2007, in Japanese Patent Application No. 2002-110208, and English Translation of Notification.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Young Christopher G.
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