Exposure method utilizing an energy beam

Details Exposure method utilizing an energy beam Exposure method utilizing an energy beam

1982-08-24

1985-07-16

Krass, Errol A.

Boots, shoes, and leggings

364491, 364518, 378 35, 2504921, 2504922, G02B 2700, G06F 314

Patent

active

045300640

ABSTRACT:
According to the present invention, a simplified process is provided for drawing a picture pattern and an alignment pattern on a substrate at a scaling factor .alpha. by utilizing an energy beam exposure device. According to the invention, a scale conversion of 1/.alpha. is first applied to the alignment mark patterns. The parameters of the exposure device such as beam diameter, beam scanning interval, beam scanning deflection amplitude, frequency division factor, and displacement velocity are altered in accordance with the desired scaling factor .alpha.. The chip pattern data and the altered alignment mark data are then utilized together for drawing the pattern of the substrate without need for re-adjustment during the drawing process.

REFERENCES:
patent: 4145615 (1979-03-01), Sumi
patent: 4199689 (1980-04-01), Takigawa
patent: 4280186 (1981-07-01), Hidai et al.
Speth et al.; Electron-Beam Lithography Using Vector-Scan Techniques; Journal Vacuum Science Tech.; vol. 12, No. 6, (1975).
Sugiyama et al.; Data Processing System of Electron-Beam Lithography for VLSI Fabrication; IEEE Tran. Elect. Dev.; vol. ED26, No. 4, Apr. 1979.

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