Exposure method of semiconductor wafer by mercury-vapor lamp

Details Exposure method of semiconductor wafer by mercury-vapor lamp Exposure method of semiconductor wafer by mercury-vapor lamp

1985-02-26

1986-08-12

Hix, L. T.

Photocopying

Projection printing and copying cameras

Illumination systems or details

355 77, 315291, 315302, 315308, G03B 2772, G05F 100

Patent

active

046053018

ABSTRACT:
Through a pattern mask, small sections of a semiconductor wafer are exposed successively to light radiated from a mercury-vapor lamp in high-level steps, during each of which the power consumption and discharge current of the mercury-vapor lamp are at a high level, by continuously lighting the mercury-vapor lamp and repeatedly alternating each of the high-level steps and a low-level step during which the power consumption and discharge current of the mercury-vapor lamp are at a low level. The alternation of the high-level step and low-level step is effected while controlling the magnitude of each of the overshoot and undershoot in the waveform of the discharge current for the mercury-vapor lamp below 10%. The exposure method of this invention is effective in avoiding or minimizing the wearing of electrodes of a mercury-vapor lamp. Thus, the mercury-vapor lamp can enjoy long service life while permitting stable exposure over a long period of time.

REFERENCES:
patent: 4024428 (1977-05-01), Bachur et al.

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