Exposure method for the contact hole

Radiation imagery chemistry: process – composition – or product th – Plural exposure steps

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S311000, C430S005000

Reexamination Certificate

active

07026106

ABSTRACT:
A method of forming contact holes in either a positive radiation sensitive layer, such as positive photoresist, or a negative radiation sensitive layer, such as negative photoresist, using three exposures is described. The sum of the three exposure doses is equal to that required to expose the entire radiation sensitive layer. The allowable contact hole locations are at the intersection of a first array of parallel regularly spaced lines and a second array of parallel regularly spaced lines. The lines are exposed in two separate exposures. For the positive radiation sensitive layer the contact holes are partially exposed by these exposures. For the negative radiation sensitive layer the contact holes remain unexposed by these exposures. The third exposure uses a pattern mask to either fully expose the contact holes in the positive radiation sensitive layer or leave them unexposed in the negative radiation sensitive layer. The radiation sensitive layer is then developed and the contact holes are formed.

REFERENCES:
patent: 5308741 (1994-05-01), Kemp
patent: 5422205 (1995-06-01), Inoue et al.
patent: 5455144 (1995-10-01), Okamoto et al.
patent: 5635316 (1997-06-01), Dao
patent: 5702868 (1997-12-01), Kellam et al.
patent: 5863712 (1999-01-01), Von Bunau et al.
patent: 5958656 (1999-09-01), Nakao
patent: 6022644 (2000-02-01), Lin et al.
patent: 6184151 (2001-02-01), Adair et al.
patent: 6238850 (2001-05-01), Bula et al.
patent: 2003/0039893 (2003-02-01), Farnsworth et al.
patent: 2004/0259042 (2004-12-01), Fritze et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Exposure method for the contact hole does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Exposure method for the contact hole, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Exposure method for the contact hole will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3552518

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.