Exposure method and pattern data preparation system therefor, pa

Incremental printing of symbolic information – Light or beam marking apparatus or processes – Scan of light

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B41J 2435

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active

057574090

ABSTRACT:
Selective pattern exposure with high reliability is made possible by a desired pattern of repeated pattern and a non-repeated pattern. Exposure technology is obtained to enable improvement of preparation efficiency of pattern data and to secure inspection of an aperture pattern. With the invention, an electron beam is used as focused beam, and a pattern exposure apparatus of a batch transfer system for transferring repeated pattern and non-repeated pattern of plural graphics of a semiconductor integrated circuit or the like comprises an EB drawing section for controlling the beam and irradiating beam onto a sample, a control I/O section, a drawing control section and a data storage section. In the EB drawing section, a semiconductor wafer is mounted on a platform, and in the path of the electron beam from the electron beam source to the stage, a first mask, a blanking electrode, an electron lens, a first deflector, a second deflector, a second mask and a third deflector are installed.

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Semiconductor World, Jul. 1990, pp. 170-175, Jun. 20, 1989 by Press Journal Co., Ltd.
SPIE vol. 632 Electron-Beam, X-Ray, & Ion-Beam Technique For Submicrometer Lithographies V (1986) pp. 85-92.
Hitachi Review vol. 40 (1991), No. 6, Development and Application of Electron Beam Lithography Systems.

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