Exposure method and apparatus

Photocopying – Projection printing and copying cameras – Step and repeat

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

355 77, G03B 2732, G03B 2742

Patent

active

057398984

ABSTRACT:
The present invention relates to a projection exposure method and an exposure apparatus for projecting a pattern on a photo-mask through a projection optical system onto a predetermined photosensitive material. The photosensitive material is a nonlinear photosensitive material in which the effective light intensity distribution is nonlinear to the intensity of incident exposure light. Further, multiple exposure is made with plural patterns having a certain lateral shift therebetween, or multiple exposure is made with shifting the position of an identical pattern, whereby multiple exposure is effected with patterns different in intensity distribution on the photosensitive material. A high-resolution pattern can be formed over the resolution limit of projection optical system by the above arrangement.

REFERENCES:
patent: 3620591 (1971-11-01), Riggs
patent: 4759616 (1988-07-01), Marchant
patent: 4984015 (1991-01-01), Okino
patent: 5245470 (1993-09-01), Keum
patent: 5291240 (1994-03-01), Jain
patent: 5333035 (1994-07-01), Shiraishi
patent: 5357311 (1994-10-01), Shiraishi
patent: 5418598 (1995-05-01), Fukuda et al.
patent: 5499137 (1996-03-01), Shiraishi
Shibuya, M., Evaluation Method for Optical Projection Lithography, Oct. 28, 1993, pp. 29-37.
Shibuya, M. et al., Resolution vs. Depth of Focus in the Resolution-Enhanced Optical System for Lithography, SPIE Proc. Series, vol. 1780, Sep. 14-18, 1992, pp. 177-131.
Ooki, H. et al., A Novel Super-Resolution Technique for Optical Lithography--Nonlinear Multiple Exposure Method, Jpn. J. Appl. Phys., vol. 33 (1994), pp. L177-L179.
Wu, E.S., et al., Two-Photon Lithography for Microelectronic Application, SPIE vol. 1674 (1992), pp. 776-782.
Tagawa, S., In the Photoresist, Two Photon Absorption or High-Density Excitation may be Occurred, Nikkei MicroDevice, vol. Feb. 1987, pp. 91-100.
Dill, F. H. et al., Characterization of Positive Photoresist, IEEE Transactions on Electron Devices, vol. ED-22, No. 7, Jul. 1975, pp. 445-452.
Griffing, B.F., Contrast Enhanced Photolithography, IEEE Electron Device Letters, vol. EDL-4, No. 1, Jan. 1993, pp. 14-16.
Grigging, B.F., Contrast Enhanced Photoresists--Processing and Modeling, General Electric Corporate R & D Technical Information Series, Sep. 1982, Report No. 82CRD252.
Shen, Y.R., University of California, Berkeley, The Principles of Nonlinear Optics, Copyright .COPYRGT. 1984 by John Wiley & Sons, Inc.
Brown, G.H., Ed., Techniques of Chemistry--Photochromism, vol. III, Copyright .COPYRGT. 1971 by John Wiley & Sons, Inc.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Exposure method and apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Exposure method and apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Exposure method and apparatus will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-640484

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.