Exposure mask with double patterning technology and method...

Details Exposure mask with double patterning technology and method... Exposure mask with double patterning technology and method...

2011-08-30

2011-08-30

Vinh, Lan (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C216S041000, C216S047000

Reexamination Certificate

active

08008210

ABSTRACT:
An exposure mask for forming a G-type active region with a double patterning technology includes a bar shaped first light-blocking pattern to define an I-type active region, and an island shaped second light-blocking pattern to define a bit line contact region. The first light-blocking pattern and the second light-blocking pattern are arranged alternately.

REFERENCES:
patent: 6184151 (2001-02-01), Adair et al.
patent: 2008/0153299 (2008-06-01), Kim
patent: 1020060109091 (2006-10-01), None

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