Exposure mask, method of manufacturing the same, and exposure me

Details Exposure mask, method of manufacturing the same, and exposure me Exposure mask, method of manufacturing the same, and exposure me

1993-07-21

1994-10-25

Neville, Thomas R.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 22, 430290, 430311, 430313, 430321, 430396, 430269, 378 35, G03F 900

Patent

active

053588088

ABSTRACT:
An exposure mask for lithography, a method of manufacturing the same, and an exposure method using the same are disclosed. A light-transmitting opening of the exposure mask has a main light-transmitting region located in the middle of the opening and having a first optical path length, and phase shift regions adjacent to a light-shielding layer and having a second optical path length, different from the first optical path length. Light transmitted through each phase shift region interferes with light transmitted through the main light-transmitting region at the edges of the light-transmitting opening, thus enabling a sharp photo-intensity distribution of total transmitted light to be obtained. As a result, the resolution of the exposure mask is improved.

REFERENCES:
patent: 4764441 (1988-08-01), Ohta et al.
patent: 5045417 (1991-09-01), Okamoto
patent: 5234780 (1993-10-01), Nitayama et al.
Levenson et al, "Improving Resolution in Photolithography with A Phase-Shifting Mask", IEEE Transactions on Electron Devices, vol. ED-29, No. 12, Dec. 1982.
Levenson et al, "The Phase-Shifting Mask II", IEEE Transactions on Electron Devices, vol. ED-31, No. 6, Jun. 1984.

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