Exposure mask, method of forming resist pattern and method...

Details Exposure mask, method of forming resist pattern and method... Exposure mask, method of forming resist pattern and method...

2007-02-12

2009-10-20

Young, Christopher G (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S030000, C430S311000, C430S322000

Reexamination Certificate

active

07604910

ABSTRACT:
An exposure mask capable of improving resolution is provided. An exposure mask includes one slit-shaped main transmission region and three pairs of slit-shaped auxiliary transmission regions arranged in order in a direction perpendicular to the longitudinal direction of the main transmission region, each pair of auxiliary transmission regions facing each other with the main transmission region in between. Compared to the case where two or less pairs of auxiliary transmission regions are included, light intensity contrast becomes higher in an end portion in a slit width direction of the main transmission region by exposing and developing a resist film through the use of the exposure mask, so the exposed width of the resist film is narrowed.

REFERENCES:
patent: 5242770 (1993-09-01), Chen et al.
patent: 7506299 (2009-03-01), Socha et al.
patent: 2009/0004577 (2009-01-01), Shim
patent: 2009/0081564 (2009-03-01), Yasuzato
patent: A 03-0210560 (1991-09-01), None
patent: B2 06-090506 (1994-11-01), None
patent: B2 2881892 (1999-04-01), None
patent: B2 3009923 (2000-02-01), None
patent: WO 93/14445 (1993-07-01), None

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