Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2005-07-05
2005-07-05
Huff, Mark F (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S296000
Reexamination Certificate
active
06913857
ABSTRACT:
As shown in FIG.2, a multi-layer structured exposure mask1of this embodiment is provided with a frame20made of glass, a silicon plate15provided on an under surface of the frame20, a heat absorption mask16provided on an under surface of the silicon plate15, a silicon plate11provided on an under surface of the heat absorption mask16and a stencil mask14provided on an under surface of the silicon plate11. The stencil mask14is made up of a silicon substrate and is provided with a slit-shaped patterning opening14ato form a resist pattern. The heat absorption mask16is made up of a silicon substrate coated with an SiN film and is provided with slit-shaped openings16ashaped in almost the same way as the patterning openings14aof the stencil mask14. The opening16ais shaped in such a size that will not block electron beams necessary to form a resist pattern as shown in FIG.3(a). That is, a size of the opening16ais equal to a size of the patterning opening14aor a size of the opening16ais a little larger Furthermore, the multi-layer structured exposure mask1of this embodiment is provided with a large opening20athat penetrates the frame20and silicon plate15and exposes the area of the upper surface of the heat absorption mask16in which the openings16aare formed. Furthermore, the multi-layer structured exposure mask1of this embodiment is provided with a hollow section11athat penetrates the silicon plate11and exposes the area of the under surface of the heat absorption mask16in which the openings16aare formed and the area of the upper surface of the stencil mask14in which the patterning openings14aare formed. In the multi-layer structured exposure mask1of this embodiment, the patterning openings14aof the stencil mask14and the openings16aof the heat absorption mask16are aligned in the horizontal direction as shown in FIG.3(a).
REFERENCES:
patent: 4916322 (1990-04-01), Glavish et al.
patent: 5814423 (1998-09-01), Maruyama et al.
patent: 6214498 (2001-04-01), Choi
patent: 6316151 (2001-11-01), Kim et al.
patent: 2 351 567 (2001-01-01), None
patent: 05-326381 (1993-12-01), None
patent: 6-5499 (1994-01-01), None
patent: 06-05499 (1994-01-01), None
patent: 2000-188254 (1999-07-01), None
patent: 2000-188254 (2000-07-01), None
patent: 2000-0060497 (2000-10-01), None
Endo Masayuki
Hisatsugu Tokushige
Sasago Masaru
Huff Mark F
Matsushita Electric - Industrial Co., Ltd.
Mohamedulla Saleha
PD Service Corporation
LandOfFree
Exposure mask, method for manufacturing the mask, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Exposure mask, method for manufacturing the mask, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Exposure mask, method for manufacturing the mask, and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3422536