Exposure mask comprising transparent and translucent phase shift

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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Details

430323, 430324, C03F 900

Patent

active

056311095

ABSTRACT:
An exposure mask is formed by providing a mask pattern including a transparent phase shift pattern and a translucent phase shift pattern on a light-transmissive substrate. Each of the transparent phase shift pattern and the translucent phase shift pattern causes a relative phase difference of 180.degree. to exposure light passing through each of the transparent phase shift pattern against exposure light passing through the light-transmissive substrate and the translucent phase shift pattern. The transparent phase shift pattern and the translucent phase shift pattern partly overlap each other. At least one opening portion in the mask pattern has at an adjacent region an overlap region of the transparent phase shift pattern and the translucent phase shift pattern region. A region of the translucent phase shift pattern is provided on the outside of the overlap region.

REFERENCES:
patent: 5318868 (1994-06-01), Hasegana et al.

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