Exposure mask and pattern forming method therefor

Details Exposure mask and pattern forming method therefor Exposure mask and pattern forming method therefor

2011-04-12

2011-04-12

Rosasco, S. (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S311000

Reexamination Certificate

active

07923179

ABSTRACT:
An exposure mask is constituted of hole-patterns whose scales are higher than the limit resolution of exposure light and which are repetitively aligned in X-Y directions with the prescribed pitch (ranging from 140 nm to 180 nm) therebetween, halftone phase shift regions whose transmission factors range from 2% to 20% and each of which is aligned between two hole-patterns adjacently lying in the X-direction or the Y-direction so as to apply an inverse phase to incidence light, and light preventive regions each of which is aligned between two hole-patterns adjacently lying in an oblique direction inclined to the X-direction or Y-direction by 45°. The exposure mask is illuminated with azimuthal polarization light which is produced by a secondary light source of a zonal illumination and whose polarization direction is perpendicular to the radial direction of the secondary light source.

REFERENCES:
patent: 5840447 (1998-11-01), Peng
patent: 6048647 (2000-04-01), Miyazaki et al.
patent: 6887633 (2005-05-01), Tang
patent: 7354682 (2008-04-01), Capodieci
patent: 2003/0180629 (2003-09-01), Wu
patent: 2004/0010385 (2004-01-01), Fukuhara et al.
patent: 2006/0088770 (2006-04-01), Tan et al.
patent: 2003-241361 (2003-08-01), None

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