Exposure mask and method of manufacture thereof

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430323, 430324, G03F 900

Patent

active

053914414

ABSTRACT:
Disclosed are phase-shifting masks wherein restriction of light transmission at edges of phase-shifting patterns (e.g., at an edge where a 180.degree. phase-shifting pattern ends on a light transmission region) is avoided, and methods of making such masks. The region of the transparent pattern of the mask, under the edge of the phase-shifting pattern, is made wider than that of the transparent pattern in other regions; moreover, an additional phase-shifting layer is provided at the edge of the phase-shifting pattern, the additional phase-shifting layer having a phase-shift preferably of less than 90.degree., to avoid a 180.degree. phase shift at the edge. Also disclosed is a phase-shifting mask having repaired defects, and a method for repairing defects in phase-shifting masks, using an additional phase-shifting layer.

REFERENCES:
patent: 5254418 (1993-10-01), Kamon et al.
"Improving Resolution in Photolithography With a Phase-Shifting Mask", IEEE Transactions on Electron Devices, vol. ED-29, No. 12, Dec. 1982, Levenson, et al.
"Opitcal/Laser Microlithography IV", SPIE-The International Society for Optical Engineering, vol. 1463, Mar. 1991.

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