Exposure mask and method of forming a contact hole of a...

Details Exposure mask and method of forming a contact hole of a... Exposure mask and method of forming a contact hole of a...

2011-06-07

2011-06-07

Tran, Binh X (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S719000, C438S725000, C438S736000, C438S738000

Reexamination Certificate

active

07955987

ABSTRACT:
An exposure mask and a method of forming a contact hole of a semiconductor device using the same, in which micro patterns can be formed are disclosed herein. In an aspect, an exposure mask method includes a mask substrate, a light-shield pattern formed on the mask substrate, and a transparent pattern in which a plurality of patterns, which are limited to the light-shield pattern and have different short-direction widths and long-direction widths, form a group which is repeatedly arranged. Accordingly, micro photoresist patterns can be formed uniformly.

REFERENCES:
patent: 6114095 (2000-09-01), Nakabayashi et al.
patent: 6599667 (2003-07-01), Yusa et al.
patent: 2003/0180631 (2003-09-01), Shiota et al.
patent: 2004/0018435 (2004-01-01), Kim
patent: 2005/0142463 (2005-06-01), Mitsui et al.
patent: 2008/0054483 (2008-03-01), Lee et al.
patent: 1020030000825 (2003-01-01), None

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