Exposure mask and method for manufacturing semiconductor...

Details Exposure mask and method for manufacturing semiconductor... Exposure mask and method for manufacturing semiconductor...

2006-12-28

2009-10-27

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07608370

ABSTRACT:
An exposure mask of a semiconductor device comprises a substrate. Recesses are etched on a surface of the substrate to change a refractive index of an incident light. The changed refractive index causes a diffraction angle of the incident light to increase or decrease. As a result of the change in the diffraction angle, ultra fine patterns for highly integrated semiconductor devices may be formed without being adversely impacted by a proximity effect.

REFERENCES:
patent: 6022645 (2000-02-01), Lin
patent: 6249335 (2001-06-01), Hirukawa et al.
patent: 10-1996-0000179 (1996-01-01), None
patent: 1019960000179 (1996-01-01), None

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