Exponentially doped layers in inverted metamorphic...

Details Exponentially doped layers in inverted metamorphic... Exponentially doped layers in inverted metamorphic...

2008-08-07

2010-06-01

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S099000, C257S040000, C257SE33001, C257SE25008, C257SE51018, C313S506000, C313S509000, C428S690000, C359S238000, C359S242000

Reexamination Certificate

active

07727795

ABSTRACT:
A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell, including providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a grading interlayer over the second subcell, the grading interlayer having a third band gap greater than the second band gap; and forming a third solar subcell over the grading interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mis-matched with respect to the second subcell, wherein at least one of the bases of a solar subcell has an exponentially doped profile.

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