Explosive crystallization in metal/silicon multilayer film

Stock material or miscellaneous articles – All metal or with adjacent metals – Foil or filament smaller than 6 mils

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340565, 428635, 428641, 437192, 437194, 437200, 148DIG140, 148DIG147, H01L 2140, H01L 2190, C23C 1104

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active

047833793

ABSTRACT:
The present invention provides a film comprising alternate layers of a metal such as zirconium and silicon. The film has a critical temperature at which the film can undergo explosive crystallization. The film undergoes explosive crystallization upon subjecting the film to an energy impulse at temperature equal to or greater than the critical temperature.

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patent: 4707197 (1987-11-01), Hensel et al.
Takamori et al., "New Noncrystalline Germanium which Crystallizes "Explosively" at Room Temperature," Appl. Phys. Lett. 20, 201 (1972).
Mineo et al., "Velocity of Propagation in the Shock-Crystallization of Sputtered Amorphous Germanium," Solid State Communications 13, 329 (1983).
Wickersham et al., "Impulse Stimulated Explosive Crystallization of Sputter Deposited Amorphous (InGa)Sb Films," Solid State Communications 27, 17 (1978).
Auvert et al., "Explosive Crystallization of a-Si Films in both the Solid and Liquid Phases," Appl. Phys. Lett. 39(9), 724 (1981).
Koba et al., "Temperature and Thickness Effects on the Explosive Crystallization of Amorphous Germanium Films," Appl. Phys. Lett. 40, 672 (1982).
Wickersham et al., "Temperature Dependent Formation of Surface Undulations in Explosively Crystallized Films," J. Vac. Sci. Technol. A 3, 335 (1985).
Floro, "Propagation of Explosive Crystallization in Thin Rh-Si Multilayer Films" J. Vac. Sci. Techno. A 4(3), 631 (1986).

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