Expanded programming window for non-volatile multilevel...

Details Expanded programming window for non-volatile multilevel... Expanded programming window for non-volatile multilevel...

2011-01-04

2011-01-04

Tran, Andrew Q (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185220, C365S185250, C365S185030, C365S185170, C365S185270

Reexamination Certificate

active

07864584

ABSTRACT:
Embodiments of the present disclosure provide methods, devices, modules, and systems for utilizing an expanded programming window for non-volatile multilevel memory cells. One method includes associating a different logical state with each of a number of different threshold voltage (Vt) distributions. In various embodiments, at least two Vt distributions include negative Vt levels. The method includes applying a read voltage to a word line of a selected cell while applying a pass voltage to word lines of unselected cells, applying a boost voltage to a source line coupled to the selected cell, applying a voltage greater than the boost voltage to a bit line of the selected cell, and sensing a current variation of the bit line in response to the selected cell changing from a non-conducting state to a conducting state.

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International Search Report (4 pgs.).

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