Exhaust apparatus in ion implantation system

Details Exhaust apparatus in ion implantation system Exhaust apparatus in ion implantation system

1997-02-07

1999-04-13

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

25044111, H01J 37317

Patent

active

058941312

ABSTRACT:
An exhaust apparatus in an ion implantation system for implanting impurities into a target substrate is used for evacuating an ion source chamber. The exhaust apparatus comprises at least one vacuum pump which does not use working oil for evacuating the ion source chamber, an atmospheric exhaust pipe connected to the vacuum pump for exhausting gas from the vacuum pump; and a device for introducing inert gas into at least one of the vacuum pump and the atmospheric exhaust pipe. The exhaust apparatus includes at least two vacuum pumps comprising a turbomolecular pump and a dry pump.

REFERENCES:
patent: 4059293 (1977-11-01), Sipler
patent: 5062771 (1991-11-01), Satou et al.
patent: 5314541 (1994-05-01), Saito et al.
European Search Report for Application No. 97102105.0 dated Jun. 24, 1997.

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