Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-10-31
2010-11-02
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257SE29168, C250S225000
Reexamination Certificate
active
07825402
ABSTRACT:
The present invention presents devices and methods for localized control and transport of excitons as well as separate processing of holes and electrons in a device with an optical input and an optical output. An example optoelectronic device includes a coupled or wide quantum well structure. Optical input and optical output electrodes are arranged over regions that are separated by a gate electrode region. The coupled or wide quantum well structure is dimensioned and formed from materials that create a nonzero distance d between the separated electron and hole of an excitors formed in response to the input. The flow of excitons (separated electrons and holes) between the optical input and optical output can be controlled by a voltage potentials applied to the localized gate electrode, optical input, and output electrodes.
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Greer Burns & Crain Ltd.
Smith Bradley K
The Regents of the University of California
Valentine Jami M
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