Excitation of polysilicon based piezoresistive pressure sensors

Details Excitation of polysilicon based piezoresistive pressure sensors Excitation of polysilicon based piezoresistive pressure sensors

1996-06-19

1997-10-28

Chilcot, Richard

Measuring and testing

Fluid pressure gauge

Diaphragm

73726, 73721, 338 42, G01L 906

Patent

active

056819978

ABSTRACT:
A polycrystalline pressure sensor is formed by depositing polycrystalline silicon piezoresistors on a polycrystalline sensing diaphragm. The piezoresistors are arranged in a wheatstone bridge configuration. During operation, an alternating differential signal is applied across the input of the wheatstone bridge. A measured voltage difference between the output terminals of the wheatstone bridge is used to detect imbalance in the electrical piezoresistors that corresponds to pressure applied to the sensor. Pressure is thereby measured.

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