Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2010-06-03
2010-12-21
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S962000, C257S014000, C257SE29071, C977S773000, C977S774000
Reexamination Certificate
active
07855091
ABSTRACT:
A composition and method for fabricating and tuning a dopant based core-shell semiconductor having a quantum dot core with an excitation band-gap are provided. A quantum dot core composed of an alloy of cadmium sulfide (CdS) and zinc sulfide (ZnS) as semi-conductor materials include a dopant of manganese (Mn) added to the core and an outer shell of zinc sulfide (ZnS). The dopant based core/shell quantum dot semiconductor of the present invention allows the fine tuning of an excitation band-gap, covering a wide range (from 2.4 eV to ˜4 eV). When doped with Mn, these alloy Qdots emit bright yellow/orange light. Tuning of the excitation band is accomplished by changing the alloy composition of the core. Based on photophysical studies a new core/shell/shell model is provided, in place of the traditional core/shell model. Due to the interfacial diffusion of the cations from the core and shell an intermediate alloy layer is formed providing an inner shell; this inner shell layer is the real host of the dopant ions.
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Kar Soumitra
Santra Swadeshmukul
Law Offices of Brian S. Steinberger , P.A.
Morlin Joyce P.
Smith Bradley K
Steinberger Brian S.
University of Central Florida Research Foundation Inc.
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