Excimer laser ablation method and apparatus for microcircuit fab

Details Excimer laser ablation method and apparatus for microcircuit fab Excimer laser ablation method and apparatus for microcircuit fab

1989-09-12

1991-05-21

Scott, Jr., Leon

Coherent light generators

Miscellaneous

372 57, 372 66, 372103, H01S 300

Patent

active

050181645

ABSTRACT:
A pulsed beam from an excimer laser is used for precision ablation of cadmium telluride (CdTe) and other materials to fabricate and delineate devices in electronic microcircuit structures. The fluence of the beam may be adjusted to selectively remove one constituent of the material, such as cadmium vs. tellurium, at a higher rate than the other constituent, while maintaining the integrity of the material surface. The beam may selectively remove an epitaxial layer of CdTe, CdZnTe, or HgCdTe from a GaAs substrate. The beam may be directed through a projection mask and optical system onto a material to form an image for patterned ablation. The optical system may focus an image of the mask on the material to form vertical sidewall patterns, or slightly defocus the image to form curved sidewall patterns and/or concave and convex lens structures for optical arrays.

REFERENCES:
Brannon "Excimer Laser Etching of Polymide"; Appl. Physics 58(5), Sep. 1985 pp. 2036-2043.
Azema et al., "Assisted ArF Excimer Photo-Etching of Mercury Cadmium Telluride (MCT) Semiconductor"; SPIE, vol. 98; Excimer Beam Applications--pp. 72-75, 1988.
"Etching of Cadmium Telluride" by P. Gaugash et al., Journal Electrochem. Soc. Solid-State Science and Technology, vol. 128; No. 4, Apr. 1981, pp. 924-926.
"Excimer Laser Etching of Polymide" by J. Brannon, Journal of Applied Physics, 58(5), Sep. 1985, pp. 2036-2043.

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