Exchange bias structure for abutted junction GMR sensor

Details Exchange bias structure for abutted junction GMR sensor Exchange bias structure for abutted junction GMR sensor

2006-04-04

2006-04-04

Jolley, Kirsten (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

C427S548000, C427S552000, C427S599000, C427S130000, C427S131000, C427S132000, C427S282000, C360S324000, C360S324100, C029S603140, C029S603150, C029S603160

Reexamination Certificate

active

07022383

ABSTRACT:
Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the inverse dependence of the exchange bias on the magnetic layer thickness, a large exchange bias has been difficult to achieve by the prior art. This problem has been solved by introducing a structure in which the magnetic moment of the bias layer has been approximately doubled by pinning it from both above and below through exchange with antiferromagnetic layers. Additionally, since the antiferromagnetic layer is in direct abutted contact with the free layer, it acts directly to help stabilize the sensor edge, which is an advantage over the traditional magnetostatic pinning that had been used.

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