Examining a structure formed on a semiconductor wafer using...

Details Examining a structure formed on a semiconductor wafer using... Examining a structure formed on a semiconductor wafer using...

2007-10-09

2007-10-09

Toatley, Jr., Gregory J. (Department: 2877)

Optics: measuring and testing

Dimension

C356S601000, C702S155000

Reexamination Certificate

active

11003961

ABSTRACT:
A structure formed on a semiconductor wafer is examined by obtaining a first diffraction signal measured from the structure using an optical metrology device. A first profile is obtained from a first machine learning system using the first diffraction signal obtained as an input to the first machine learning system. The first machine learning system is configured to generate a profile as an output for a diffraction signal received as an input. A second profile is obtained from a second machine learning system using the first profile obtained from the first machine learning system as an input to the second machine learning system. The second machine learning system is configured to generate a diffraction signal as an output for a profile received as an input. The first and second profiles include one or more parameters that characterize one or more features of the structure.

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