Evaporation system and method for gas jet deposition of thin fil

Coating processes – Spray coating utilizing flame or plasma heat

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427250, 4272551, 4272552, 4272555, 118718, 118723ME, 118723MP, 118726, 118729, 118730, C23C 1650

Patent

active

053566734

ABSTRACT:
A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases.

REFERENCES:
patent: 2155932 (1939-04-01), Davis
patent: 3850679 (1974-11-01), Sopko et al.
patent: 4788082 (1988-11-01), Schmitt
patent: 4957061 (1990-09-01), Ando et al.
patent: 4957062 (1990-09-01), Schuurmans et al.
patent: 4970091 (1990-11-01), Buhrmaster et al.
patent: 5000114 (1991-03-01), Yanagi et al.
High Quality MNS Capacitors Prepared By Jet Vapor Deposition At Room Temperature by D. Wang, T. P. Ma, J. W. Golz, B. L. Halpern & J. S. Schmitt from IEEE Electron Device Letters, vol. 13, No. 9, Sept. 1992.
Nuccio, C. and R. N. Schiavone, "Enhancing Semiconductor Reactions", IBM Technical Disclosure Bulletin, vol. 12, No. 9 (Feb. 1970) p. 1433-1434.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Evaporation system and method for gas jet deposition of thin fil does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Evaporation system and method for gas jet deposition of thin fil, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Evaporation system and method for gas jet deposition of thin fil will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2370939

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.