Evaporation method of forming transparent barrier film

Coating processes – Direct application of electrical – magnetic – wave – or... – Ion plating or implantation

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4272481, 427294, 427585, C23C 1600

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active

053785061

ABSTRACT:
This invention relates to a source material for vapor deposition, which is useful for forming a magnesium oxide thin film by vacuum vapor deposition process, and to a method of forming a transparent barrier film by using the magnesium oxide source material. The source material is composed of a magnesium oxide having a bulk density of 2.5 g/ml or more. This magnesium oxide can be obtained by sintering or fusing magnesium oxide material. For producing a transparent barrier film having a gas barrier property, this magnesium oxide is vapor-deposited on a surface of a transparent plastic base film by means of vacuum vapor deposition. The volume shrinkage or cracking of the evaporation source material can be avoided, thereby stabilizing the evaporation and prolonging duration of the evaporation. Further, it is possible to utilize a high power of electron beam. Since the evaporation source material is substantially free from pore, the evacuation of gas from the evaporation apparatus can be finished within a short period of time, and the vacuum degree within the evaporation apparatus can be stabilized. Since there is no splash or scattering during the evaporation., a transparent barrier film which is uniform in thickness and free from pinhole can be obtained.

REFERENCES:
patent: 3442686 (1969-05-01), Jones

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