Evaporation device

Details Evaporation device Evaporation device

1982-04-27

1983-07-12

Smith, John D.

Coating apparatus

Gas or vapor deposition

With treating means

118724, 118725, 118726, 118 501, 422168, C23C 1312

Patent

active

043924522

ABSTRACT:
In a vacuum container an active (or atomic state) gas consisting of either one of active hydrogen, active oxygen and active nitrogen with a partial pressure of 1.times.10.sup.-3 Torr or less is produced. In an atmosphere of the active (or atomic state) gas, a film, which consists of a compound presenting semiconductor characteristics (CdS, CdSe, ZnSe, ZnS, ZnTe, CdTe) or a solid solution thereof and presents a desired polarity property such as p, n, p.sup.+ or n.sup.+, is vapor-deposited on a substrate at a desired position with a desired thickness, so as to fabricate an evaporation device which is preferable, for example, as a photoconductive target for a television camera tube.

REFERENCES:
patent: 3847114 (1974-11-01), Kiyozumi
patent: 3974059 (1976-08-01), Murayama
patent: 3980044 (1976-09-01), Zollinger
patent: 4178877 (1979-12-01), Kudo
patent: 4310614 (1982-01-01), Connell et al.

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