Evaporated solderable multilayer contact for silicon semiconduct

Details Evaporated solderable multilayer contact for silicon semiconduct Evaporated solderable multilayer contact for silicon semiconduct

1975-08-20

1976-11-02

Wojciechowicz, Edward J.

357 65, H01L 2348

Patent

active

039900940

ABSTRACT:
An evaporated multilayer solderable low resistance contact for N-type and P-type regions on a semiconductor body comprising an aluminum layer directly on the semiconductor body, an evaporated manganese layer on the aluminum layer and an evaporated nickel layer on the manganese layer.

REFERENCES:
patent: 3886585 (1975-05-01), Konantz et al.

Affiliated with

Also associated with

Rating

Evaporated solderable multilayer contact for silicon semiconduct does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Evaporated solderable multilayer contact for silicon semiconduct, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Evaporated solderable multilayer contact for silicon semiconduct will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1163183