Evaporated solderable multilayer contact for silicon semiconduct

Details Evaporated solderable multilayer contact for silicon semiconduct Evaporated solderable multilayer contact for silicon semiconduct

1976-06-01

1977-07-12

Esposito, Michael F.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 89, 427 91, 427124, 427250, 427255, B44D 114, B44D 118

Patent

active

040355268

ABSTRACT:
An evaporated multilayer solderable low resistance contact for N-type and P-type regions on a semiconductor body comprising an aluminum layer directly on the semiconductor body, an evaporated manganese layer on the aluminum layer and an evaporated nickel layer on the manganese layer.

REFERENCES:
patent: 2873216 (1959-02-01), Schable
patent: 3053923 (1962-09-01), Stearns
patent: 3607148 (1971-09-01), Foote
patent: 3621564 (1971-11-01), Tanaka
patent: 3622385 (1971-11-01), Stork
patent: 3667989 (1972-06-01), Keating
patent: 3738877 (1973-06-01), Davisohn
patent: 3856647 (1974-06-01), Blachman
patent: 3922385 (1975-11-01), Konantz

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