Optical waveguides – Integrated optical circuit
Reexamination Certificate
2008-05-02
2010-06-08
Peng, Charlie (Department: 2883)
Optical waveguides
Integrated optical circuit
C385S129000, C385S131000, C385S030000
Reexamination Certificate
active
07734123
ABSTRACT:
Briefly, in accordance with one or more embodiments, a hybrid photonics device comprises a silicon portion having one or more features formed therein, a non-silicon portion comprising one or more photonics devices proximate to the one or more features of the silicon portion, and a bonding layer coupling the silicon portion with the non-silicon portion, the non-silicon portion being bonded to the silicon portion via the bonding layer prior to patterning of the one or more photonics devices.
REFERENCES:
patent: 6852556 (2005-02-01), Yap
patent: 2007/0170417 (2007-07-01), Bowers
Alexe, M., V. Dragoi, M. Reiche, U. Gosele, “Low temperature GaAs/Si direct wafer bonding”, Electronics Letters, V. 36, 667-8 (2000).
“An electrically pumped hybrid silicon evanescent amplifier,” H. Park, A. W. Fang, R. Jones, O. Cohen, J. E. Bowers, Optical Fiber Communication Conference (OFC 2007), OTuD2, Anaheim CA, Mar. 2007.
W.P. Wong, K.S. Chiang, “Calculation of Confinement Factors for Multiple-Quantum-Well Optical Amplifiers by the Effective—index Model”, Microwave and optical Technology Letters, vol. 25, No. 4, May 2000, 275-8.
Bar Hanan
Jones Richard
Cool Patent P.C.
Curtin Joseph P.
Intel Corporation
Peng Charlie
LandOfFree
Evanescent III-V silicon photonics device with spin coat... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Evanescent III-V silicon photonics device with spin coat..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Evanescent III-V silicon photonics device with spin coat... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4244225