Evaluation method of resist coating

Details Evaluation method of resist coating Evaluation method of resist coating

1991-08-20

1993-10-12

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Registration or layout process other than color proofing

430324, 430328, 430394, G03F 900

Patent

active

052524140

ABSTRACT:
A method for evaluating a resist coating comprising the steps of: forming a first layer resist pattern including an alignment mark by applying a first resist on a semiconductor substrate and by exposing and developing said first resist, said first layer resist pattern having a ridge portion; irradiating said first layer resist pattern with a deep ultraviolet ray; applying, onto said irradiated first layer resist pattern, a second resist having substantially the same refractive index as said first resist to form a second resist coating; detecting said alignment mark formed in said first layer resist pattern, and relatively positioning a pattern for said second resist and said first layer resist pattern; and determining nonuniformity characteristics of said second resist coating by measuring an overlay accuracy between said first layer resist pattern and said pattern for said second resist. The present invention ensures a quantitative evaluation in a non-contact manner for non-uniformity of a resist coating, and enables a resist coating method to be optimized.

REFERENCES:
patent: 4548688 (1985-10-01), Matthews
patent: 4808501 (1989-02-01), Chiulli
patent: 4837098 (1989-06-01), Shimamura
patent: 5096802 (1992-03-01), Hu
K. Yamashita et al., "Heterodyne Holographic Nanometer Alignment For a Half-Micron Wafer Stepper", Reprinted from Optical/Laser Microlithography III, SPIE, vol. 1264, pp. 219-226 (1990).

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