Evaluation method for semiconductor device

Details Evaluation method for semiconductor device Evaluation method for semiconductor device

1988-09-30

1990-11-06

Eisenzopf, Reinhard J.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158T, G01R 3126

Patent

active

049689320

ABSTRACT:
An evaluation method for a semiconductor device includes the steps of applying a reverse bias voltage between an N-type substrate formed in a surface of the semiconductor device and a P-type region formed in a surface of the N-type substrate to form a depletion layer along the junction therebetween, scanning the surface of the semiconductor device is one direction with a light beam to cause an optical beam induced current to be flow across the junction, and measuring the OBIC intensity profile on a scanning line extending across the depletion layer in the surfaces of the N-type substrate and P-type region. In the method, the light beam has a wavelength whose penetration length is smaller than the depth or thickness of the P-type region, the OBIC intensity profile is integrated over a range corresponding to the depletion layer, and the integrated value is normalized by the reverse bias voltage to determine the surface potential distribution of the semiconductor device.

REFERENCES:
patent: 4296372 (1989-10-01), Feuerbaum
patent: 4609867 (1986-09-01), Schink
patent: 4675601 (1987-06-01), Zoutendyk et al.
European Search Report, EP 8811 6112.
Japanese Journal of Applied Physics, "Novel Method for Measuring Intensity Distribution of Focused Ion Beams", vol. 22, No. 12, pp. 780-782.
N.T.I.S. Technical Notes, "Electron Beam Could Probe Recombination Centers", No. 8, Aug., 1984, Part B, p. 570.
The Society of Photo-Optical Instrumentation Engineers, "Applications of a Two-Wavelength Laser Scanner . . . ", vol. 276, pp. 61-69, Apr., 1981.
Solid State Electronics, "Scanning Electron Microscope Measurements on Short Channel MOS Transistors", vol. 23, No. 4, pp. 345-356, Apr., 1980.
Stengl, R., "High-Voltage Planar Junctions Investigated by the OBIC Method", IEEE Transactions on Electron Devices, vol. ED-34, No. 4, pp. 911-919.

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