Evaluation method for polycrystalline silicon film

Details Evaluation method for polycrystalline silicon film Evaluation method for polycrystalline silicon film

1998-02-19

1999-11-30

King, Roy V.

Coating processes

Measuring, testing, or indicating

42725518, 4272557, 4273722, 438488, 438764, B05D 512

Patent

active

059938935

ABSTRACT:
The invention provides an evaluation method for a polycrystalline silicon film by which the film quality of a polycrystalline silicon film can be evaluated by a simple method. A silicon oxide film is formed on a p-type silicon substrate, and a photo-resist film having two openings therein is formed on the silicon oxide film. The silicon oxide film is etched to form openings therein, and a polycrystalline silicon film is deposited. Then, arsenic is ion implanted, and heat treatment is performed to form a diffused layer. The polycrystalline silicon film is patterned to form polycrystalline silicon electrodes. A voltage is applied between the polycrystalline silicon electrodes to measure a withstanding voltage and a condition of the diffused layer is recognized, and evaluation of the film quality of the polycrystalline silicon film and an interface condition between the polycrystalline silicon film and the p-type silicon substrate is performed based on the recognition.

Affiliated with

Also associated with

Rating

Evaluation method for polycrystalline silicon film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Evaluation method for polycrystalline silicon film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Evaluation method for polycrystalline silicon film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1668618