Evaluation method for evaluating insulating film, evaluation...

Electricity: measuring and testing – Determining nonelectric properties by measuring electric...

Reexamination Certificate

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C438S018000, C257S048000

Reexamination Certificate

active

06859023

ABSTRACT:
A method for evaluating an insulating film includes: a first step of forming an insulating film on a semiconductor substrate including a p-n junction therein; a second step of selectively forming an electrode pattern on the insulating film; a third step of forming a measurement electrode on the insulating film so as to be electrically insulated from the electrode pattern; and a fourth step of applying a measurement voltage between the measurement electrode and the semiconductor substrate via the insulating film and measuring a leakage current leaking through the p-n junction so as to evaluate a damage to the insulating film or the semiconductor substrate.

REFERENCES:
patent: 7-161786 (1995-06-01), None
patent: 10-270520 (1998-10-01), None
patent: 2001-189361 (2001-07-01), None
patent: 2001-332596 (2001-11-01), None

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