Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2002-07-10
2004-08-17
Rosasco, S. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
Reexamination Certificate
active
06777137
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Technical Field
The present invention relates to an extreme ultraviolet lithography (EUVL) mask structure and formation thereof.
2. Related Art
During fabrication of an extreme ultraviolet lithography (EUVL) mask structure, defects in the EUVL mask structure are inadvertently generated. Unfortunately, repair of such defects by use of, inter alia, a charged particle beam, a laser beam, etc. may modify the EUVL mask in a manner that impairs the effectiveness of the EUVL mask. Thus, there is a need for a structure and associated method that enables EUVL mask defects to be repaired without impairing the effectiveness of the EUVL mask.
SUMMARY OF THE INVENTION
The present invention provides a method of forming an extreme ultraviolet lithography (EUVL) mask structure, comprising:
providing a first conductive layer between a buffer layer and an absorber layer such that the buffer layer is on a multilayer stack that is adapted to substantially reflect EUV radiation incident thereon, and wherein the absorber layer is adapted to absorb essentially all of EUV radiation incident thereon;
forming a mask pattern in the absorber layer accompanied by inadvertent formation of a defect in the absorber layer; and
repairing the defect.
The present invention provides an extreme ultraviolet lithography (EUVL) mask structure, comprising:
a multilayer stack adapted to substantially reflect EUV radiation incident thereon; and
a first conductive layer between a buffer layer and an absorber layer such that the buffer layer is on the multilayer stack, wherein the absorber layer includes a mask pattern such that a portion of the first conductive layer is exposed, and wherein the absorber layer is adapted to absorb essentially all of EUV radiation incident thereon.
The present invention provides an extreme ultraviolet lithography (EUVL) mask, comprising:
a multilayer stack adapted to substantially reflect EUV radiation incident thereon; and
a first conductive layer between a buffer layer and an absorber layer such that the buffer layer is on the multilayer stack, wherein a mask pattern in each of the absorber layer, first conductive layer, and buffer layer collectively exposes a portion of the multilayer stack, wherein the absorber layer is adapted to absorb essentially all of EUV radiation incident thereon, and wherein the absorber layer, first conductive layer, and buffer layer are essentially defect free.
The present invention provides an EUV structure and associated method of formation that enables EUVL mask defects to be repaired without impairing the effectiveness of the EUVL mask.
In the specification and claims herein, “conductive” means electrically conductive and “non-conductive” means not electrically conductive.
REFERENCES:
patent: 4440841 (1984-04-01), Tabuchi
patent: 5322749 (1994-06-01), Han
patent: 5928817 (1999-07-01), Yan et al.
patent: 5935737 (1999-08-01), Yan
patent: 5985493 (1999-11-01), Liddle et al.
patent: 6090507 (2000-07-01), Grenon et al.
patent: 6165649 (2000-12-01), Grenon et al.
patent: 6178221 (2001-01-01), Levinson et al.
patent: 6180291 (2001-01-01), Bessy et al.
patent: 6190836 (2001-02-01), Grenon et al.
patent: 6352803 (2002-03-01), Tong et al.
patent: 6589717 (2003-07-01), Ghandehari et al.
Fisch Emily E.
Kindt Louis M.
Levin James P.
Schmidt Michael R.
Williams Carey T.
Kotulak Richard M.
Rosasco S.
Schmeiser Olsen & Watts
LandOfFree
EUVL mask structure and method of formation does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with EUVL mask structure and method of formation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and EUVL mask structure and method of formation will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3271136