EUVL mask, method of fabricating the EUVL mask, and wafer...

Details EUVL mask, method of fabricating the EUVL mask, and wafer... EUVL mask, method of fabricating the EUVL mask, and wafer...

2008-03-31

2010-12-07

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07846621

ABSTRACT:
A mask for extreme ultra violet lithography (EUVL) and a method of fabricating the same, and a wafer exposure method using the same. According to a method of fabricating the mask, a light reflective layer pattern is formed on a transparent substrate to reflect extreme ultraviolet light. The extreme ultraviolet light is incident to and transmitted by the transparent substrate. A light absorption layer on the transparent substrate is formed to fill between the light reflective layer patterns and absorb the extreme ultraviolet light.

REFERENCES:
patent: 6707123 (2004-03-01), Rau
patent: 6872495 (2005-03-01), Schwarzl
patent: 6986971 (2006-01-01), Han et al.
patent: 2007/0015065 (2007-01-01), Abe et al.
patent: 2007/0070322 (2007-03-01), Hudyma et al.
patent: 10-2002-0056012 (2002-07-01), None

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