EUV magnetic contrast lithography mask and manufacture thereof

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Reexamination Certificate

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07407729

ABSTRACT:
An EUV Lithography mask, a fabrication method, and use method thereof is provided. A preferred embodiment comprises a substrate, a Bragg reflector disposed upon the substrate, a buffer disposed upon the Bragg reflector, and an absorber layer disposed upon the buffer. The materials in the mask have selected magnetic properties. In a preferred embodiment, the buffer is a hard magnetic material, and the absorber is a soft magnetic material. Another preferred embodiment includes a mask manufacturing method further including a mask step. In a preferred embodiment, an electron mirror microscope is used to inspect the mask by imaging its topography with respect to its magnetic properties in an applied magnetic field.

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Seiler, Helmut, “Abbildung Von Oberflachen,” Bibliographisches Institut, Manheim/Zurich (1968) pp. 96-100.

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