Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With plasma generation means remote from processing chamber
Reexamination Certificate
2004-11-01
2011-12-13
Tran, Binh X (Department: 1713)
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With plasma generation means remote from processing chamber
C156S345390, C156S345420, C156S345500, C438S708000, C438S709000
Reexamination Certificate
active
08075732
ABSTRACT:
A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.
REFERENCES:
patent: 2759106 (1956-08-01), Wolter
patent: 3150483 (1964-09-01), Mayfield et al.
patent: 3232046 (1966-02-01), Meyer
patent: 3279176 (1966-10-01), Boden
patent: 3746870 (1973-07-01), Demarest
patent: 3960473 (1976-06-01), Harris
patent: 3961197 (1976-06-01), Dawson
patent: 3969628 (1976-07-01), Roberts et al.
patent: 4042848 (1977-08-01), Lee
patent: 4088966 (1978-05-01), Samis
patent: 4143275 (1979-03-01), Mallozzi et al.
patent: 4162160 (1979-07-01), Witter
patent: 4203393 (1980-05-01), Giardini
patent: 4364342 (1982-12-01), Asik
patent: 4369758 (1983-01-01), Endo
patent: 4504964 (1985-03-01), Cartz et al.
patent: 4507588 (1985-03-01), Asmussen et al.
patent: 4536884 (1985-08-01), Weiss et al.
patent: 4538291 (1985-08-01), Iwamatsu
patent: 4561406 (1985-12-01), Ward
patent: 4596030 (1986-06-01), Herziger et al.
patent: 4618971 (1986-10-01), Weiss et al.
patent: 4626193 (1986-12-01), Gann
patent: 4633492 (1986-12-01), Weiss et al.
patent: 4635282 (1987-01-01), Okada et al.
patent: 4751723 (1988-06-01), Gupta et al.
patent: 4752946 (1988-06-01), Gupta et al.
patent: 4774914 (1988-10-01), Ward
patent: 4837794 (1989-06-01), Riordan et al.
patent: 4928020 (1990-05-01), Birx et al.
patent: 5023897 (1991-06-01), Neff et al.
patent: 5027076 (1991-06-01), Horsley et al.
patent: 5102776 (1992-04-01), Hammer et al.
patent: 5126638 (1992-06-01), Dethlefsen
patent: 5142166 (1992-08-01), Birx
patent: 5175755 (1992-12-01), Kumakhov
patent: 5313481 (1994-05-01), Cook et al.
patent: 5319695 (1994-06-01), Itoh et al.
patent: RE34806 (1994-12-01), Cann
patent: 5411224 (1995-05-01), Dearman et al.
patent: 5448580 (1995-09-01), Birx et al.
patent: 5504795 (1996-04-01), McGeoch
patent: 5577092 (1996-11-01), Kublak et al.
patent: 5729562 (1998-03-01), Birx et al.
patent: 5763930 (1998-06-01), Partlo
patent: 5866871 (1999-02-01), Birx
patent: 5936988 (1999-08-01), Partlo et al.
patent: 5963616 (1999-10-01), Silfvast et al.
patent: 6031241 (2000-02-01), Silfvast et al.
patent: 6039850 (2000-03-01), Schulz
patent: 6051841 (2000-04-01), Partlo
patent: 6064072 (2000-05-01), Partlo et al.
patent: 6172324 (2001-01-01), Birx
patent: 6195272 (2001-02-01), Pascente
patent: 6285743 (2001-09-01), Kondo et al.
patent: 6304630 (2001-10-01), Bisschops et al.
patent: 6307913 (2001-10-01), Foster et al.
patent: 6377651 (2002-04-01), Richardson et al.
patent: 6396900 (2002-05-01), Barbee, Jr. et al.
patent: 6452194 (2002-09-01), Bijkerk et al.
patent: 6452199 (2002-09-01), Partlo et al.
patent: 6493423 (2002-12-01), Bisschops
patent: 6566667 (2003-05-01), Partlo et al.
patent: 6566668 (2003-05-01), Rauch et al.
patent: 6576912 (2003-06-01), Visser et al.
patent: 6586757 (2003-07-01), Melnychuk et al.
patent: 6589709 (2003-07-01), Okoroanyanwu et al.
patent: 6590959 (2003-07-01), Kandaka et al.
patent: 6647086 (2003-11-01), Amemiya et al.
patent: 6744060 (2004-06-01), Ness et al.
patent: 6804327 (2004-10-01), Schriever et al.
patent: 6815700 (2004-11-01), Melnychuk et al.
patent: 6865255 (2005-03-01), Richardson
patent: 6893975 (2005-05-01), Yue et al.
patent: 6968850 (2005-11-01), Chan et al.
patent: 7026629 (2006-04-01), Bakker et al.
patent: 7116394 (2006-10-01), Bakker et al.
patent: 2001/0006217 (2001-07-01), Bisschops
patent: 2002/0168049 (2002-11-01), Schriever et al.
patent: 2003/0006708 (2003-01-01), Leung et al.
patent: 2003/0068012 (2003-04-01), Ahmad et al.
patent: 2003/0219056 (2003-11-01), Yager et al.
patent: 2004/0179178 (2004-09-01), Emoto
patent: 2004/0208286 (2004-10-01), Richardson
patent: 2004/0227102 (2004-11-01), Kurt et al.
patent: 1643310 (2006-05-01), None
patent: 2000091096 (2000-03-01), None
patent: 2004-273864 (2004-07-01), None
patent: WO2004/104707 (2004-12-01), None
patent: WO2006020080 (2006-02-01), None
Andreev, et al., “Enhancement of laser/EUV conversion by shaped laser pulse interacting with Li-contained targets for EUV lithography”, Proc. OfSPIE, 5196:128-136, (2004).
Apruzese, J.P., “X-Ray Laser Research Using Z Pinches,”Am. Inst. of Phys. 399-403, (1994).
Bollanti, et al., “Compact Three Electrodes Excimer Laser IANUS for a POPA Optical System,”SPIE Proc. (2206)144-152, (1994).
Bollanti, et al., “Ianus, the three-electrode excimer laser,”App. Phys. B(Lasers&Optics) 66(4):401-406, (1998).
Braun, et al., “Multi-component EUV Multilayer Mirrors,”Proc. SPIE, 5037:2-13, (2003).
Choi, et al., “A 1013A/s High Energy Density Micro Discharge Radiation Source,”B. Radiation Characteristics, p. 287-290.
Choi, et al., “Fast pulsed hollow cathode capillary discharge device,”Rev. of Sci. Instrum. 69(9):3118-3122 (1998).
Choi et al., Temporal development of hard and soft x-ray emission from a gas-puff Z pinch, Rev. Sci. Instrum. 57(8), pp. 2162-2164 (Aug. 1986).
Feigl, et al., “Heat Resistance of EUV Multilayer Mirrors for Long-time Applications,”Microelectric Engineering, 57-58:3-8, (2001).
Fomenkov, et al., “Characterization of a 13.5nm Source for EUV Lithography based on a Dense Plasma Focus and Lithium Emission,” Sematech Intl. Workshop on EUV Lithography (Oct. 1999).
Giordano and Letardi, “Magnetic pulse compressor for prepulse discharge in spiker-sustainer excitati technique for XeCl lasers,” Rev. Sci. Instrum 65(8), pp. 2475-2481 (Aug. 1994).
Hansson, et al., “Xenon liquid jet laser-plasma source for EUV lithography,” Emerging Lithographic Technologies IV,Proc. Of SPIE, vol. 3997:729-732 (2000).
Jahn, Physics of Electric Propulsion, McGraw-Hill Book Company, (Series in Missile and Space U.S.A.), Chap. 9, “Unsteady Electromagnetic Acceleration,” p. 257 (1968).
Kato, Yasuo, “Electrode Lifetimes in a Plasma Focus Soft X-Ray Source,”J. Appl. Phys. (33) Pt. 1, No. 8:4742-4744 (1991).
Kato, et al., “Plasma focus x-ray source for lithography,”Am. Vac. Sci. Tech. B., 6(1): 195-198 (1988).
Lebert, et al., “Soft x-ray emission of laser-produced plasmas using a low-debris cryogenic nitrogen target,”J. App. Phys., 84(6):3419-3421 (1998).
Lebert, et al., “A gas discharged based radiation source for EUV-lithography,” Intl. Conf. Micro and Nano-Engineering 98 (Sep. 22-24, 1998) Leuven, Belgium.
Lebert, et al., “Investi
Ershov Alexander I.
Fomenkov Igor V.
Hemberg Oscar
Marx William F.
Oldham William
Cymer Inc.
Tran Binh X
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