Eutectic Cu-alloy wiring structure in a semiconductor device

Details Eutectic Cu-alloy wiring structure in a semiconductor device Eutectic Cu-alloy wiring structure in a semiconductor device

1995-11-16

1997-11-11

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257752, 257757, 257761, 257762, 257763, 257915, H01L 2943

Patent

active

056867603

ABSTRACT:
In a semiconductor device having a wiring groove in alignment with a contact hole, a wiring structure includes a diffusion preventing film formed on the bottom and side walls of the wiring groove, the diffusion preventing film being composed of a barrier metal for preventing diffusion of Cu and an element which cooperates with Cu so as to form a eutectic Cu-alloy having a eutectic temperature of not higher than 850.degree. C. A Cu film is formed on the diffusion preventing film so as to fill up the wiring groove, so that Cu and the above mentioned element actually form the eutectic Cu-alloy having the eutectic temperature of not higher than 850.degree. C.

REFERENCES:
patent: 4843453 (1989-06-01), Hooper et al.
IBM TDB, Utilization of Copper Transition Alloys in Integrated Circuits, vol. 35, No. 7, Dec. 1992, pp. 133-134.

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