Europium-containing group IIA fluoride epitaxial layer on silico

Details Europium-containing group IIA fluoride epitaxial layer on silico Europium-containing group IIA fluoride epitaxial layer on silico

1997-09-15

1999-08-03

O'Shea, Sandra

Electric lamp and discharge devices

With luminescent solid or liquid material

Solid-state type

313506, 313509, 2525211, H01J 162

Patent

active

059329645

ABSTRACT:
A light-emitting, specifically electroluminescent, europium-containing Group IIA fluoride epitaxial layer on silicon with a europium concentration in the range of from about 4 to about 40 wt % and a molecular beam epitaxy method for growth thereof are provided. Also provided is a light-emitting, specifically electroluminescent, device including a europium-containing Group IIA fluoride epitaxial layer on silicon with a europium concentration in the range of from about 4 to about 40 wt %. The Group IIA fluoride layer exhibits electroluminescence in the wavelength range of from about 450 to about 700 nm.

REFERENCES:
patent: 5384795 (1995-01-01), Cho
patent: 5543237 (1996-08-01), Watanabe
patent: 5552667 (1996-09-01), Cho et al.
Sokolov et al., Sov. Phys. Solid State 31(2), 1989, 216-218.
Miura et al., Jpn. J. Appl. Phys. 31, 1992, L46-L48.

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