Etching windows in thick dielectric coatings overlying semicondu

Coating processes – Electrical product produced – Condenser or capacitor

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29571, 427 94, 427 96, 156644, 156650, 156653, 156657, 156662, H01L 2128

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042998620

ABSTRACT:
Windows in a glass coating on a semiconductor wafer surface are opened to an underlying semiconductor device region without inadvertently exposing adjacent device portions within the window. In the preferred process a precisely etchable silicon nitride coating is initially applied and windows precisely etched in it. The glass is applied later and preferentially etched, whereby undesired lateral etching of the glass can occur without unintentionally exposing adjacent device portions.

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