Etching technique for producing cubic boron nitride films

Details Etching technique for producing cubic boron nitride films Etching technique for producing cubic boron nitride films

1994-07-29

1996-07-16

Dang, Thi

Etching a substrate: processes

Etching and coating occur in the same processing chamber

216 64, 216 67, 216 74, 2041921, B05D 500

Patent

active

055359051

ABSTRACT:
The invention generally includes a new technique for making cubic boron nitride films with low contamination from other forms of boron nitride such as hexagonal and amorphous boron nitride. Films including either hexagonal or amorphous boron nitride are etched in a gas atmosphere including a halogen and/or hydrocarbon radical, preferably a methyl radical (CH.sub.3 ). Such atmospheres may be a plasma etching atmosphere also including hydrogen and hydrogen atoms. The etching technique is successful in removing hexagonal or amorphous boron nitride and leaving cubic boron nitride, or in converting hexagonal or amorphous boron nitride into cubic boron nitride, thus increasing the concentration of cubic boron nitride in the film. Interestingly, little or no etching of hexagonal or amorphous boron nitride occurs using only hydrogen or hydrogen atoms.

REFERENCES:
patent: 5096740 (1992-03-01), Nakagama et al.
patent: 5217567 (1993-06-01), Cote et al.
patent: 5324690 (1994-06-01), Gelatos et al.
patent: 5366556 (1994-11-01), Prince et al.
J. Szmidt, "Selective Etching of c-BN Layers", Warsaw Univ Technol, Inst Microelectr & Optoelectr, Koszykowa 75/PL-00662 Warsaw/Poland; Diamond and Related Materials, vol. 3, No. 4-6, pp. 650-653, Apr. 1994--Abstract Attached.

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