Etching solutions containing ammonium fluoride and an alkylpheno

Compositions – Chemiluminescent

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156657, 156662, C09K 1308

Patent

active

047612452

ABSTRACT:
Etching solutions used to etch, for example, silicon dioxide coated substrates in the manufacture of integrated circuits comprise an aqueous solution of ammonium fluoride and a wetting amount of a nonionic alkylphenol polyglycidol ether having the formula: ##STR1## wherein R is an alkyl group having from about 4 to about 12 carbon atoms, and x is from about 3 to about 15. The etching solutions preferably contain hydrogen fluoride in a volume ratio of NH.sub.4 F to HF of from about 3:1 to about 50:1. The novel etching solutions of the present invention have excellent wetting characteristics, will not incorporate metallic ions, and retain their wetting properties after extended periods of continuous filtration.

REFERENCES:
patent: 3181984 (1965-05-01), Tillis
patent: 3992235 (1976-11-01), Garbarini
patent: 4517106 (1985-05-01), Hopkins et al.
patent: 4582624 (1986-04-01), Enjo et al.
patent: 4620934 (1986-09-01), Hopkins et al.
Fluorad, Fluorochemical Surfactants, a Product Information Bulletin by 3M 1982.
Olin Chemical Specialties, Product Data Sheet, Glycidol Surfactant 10G Specialty Nonionic Surfactant, 1979.

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