Etching a substrate: processes – Nongaseous phase etching of substrate – Etching inorganic substrate
Reexamination Certificate
2008-04-15
2008-04-15
Culbert, Roberts (Department: 1792)
Etching a substrate: processes
Nongaseous phase etching of substrate
Etching inorganic substrate
C252S079100, C252S079200, C216S106000, C216S013000
Reexamination Certificate
active
07357879
ABSTRACT:
There is provided an etching solution comprised of a cupric chloride solution and a high-concentration triazole type compound added to the cupric chloride solution and capable of forming an etching-inhibiting coating. In a process of forming a circuit pattern by etching with the etching solution, an etching-inhibiting coating is selected formed on parts of a copper foil laid under the edge of an etching resist to effectively inhibit horizontal side-etching of the copper foil from the edge of the etching resist. Also, nonuniform irregularities formed on the side wall of the circuit pattern by the etching improves the adhesion between the circuit pattern and an insulating resin layer covering the circuit pattern.
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Matsui Kazuhiko
Sawa Shigeki
Takahashi Tsunehisa
Culbert Roberts
Ibiden Co. Ltd.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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