Etching solution for evaluating crystal faults

Details Etching solution for evaluating crystal faults Etching solution for evaluating crystal faults

1988-03-02

1988-11-29

Powell, William A.

Compositions

Etching or brightening compositions

Inorganic acid containing

156657, 156662, 252 793, H01L 21306, B44C 122

Patent

active

047879971

ABSTRACT:
An etching solution used for evaluating crystal defects in a silicon wafer is disclosed. The etching solution is characterized by consisting of acetic acid, hydrofluoric acid, nitric acid, silver nitrate, and copper nitrate, and is very advantageous in consideration of the operator's health, since it does not contain Cr.sup.6+. The etching solution has a sufficiently high etching rate and detection properties.

REFERENCES:
patent: 3272748 (1966-09-01), Szkudlapski
patent: 4681657 (1987-07-01), Hwang et al.
W. C. Dash, "Copper Precipitation on Dislocations in Silicon", Journal of Applied Physics, vol. 27, No. 10, pp. 1193-1195, Oct. 1956.
Jenkins, "A New Preferential Etch for Defects in Silicon Crystals", J. Electrochem. Soc., vol. 124, No. 5, pp. 757-762, May 1977.
d'Aragoa, "Dislocation Etch for (100) Planes in Silicon", J. Electrochem. Soc., vol. 119, No. 7, pp. 948-951, Jul. 1972.

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