Etching solution for etching porous silicon, etching method usin

Details Etching solution for etching porous silicon, etching method usin Etching solution for etching porous silicon, etching method usin

1992-02-14

1998-06-16

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Altering etchability of substrate region by compositional or...

438703, 438753, 216 56, 216 87, 216 99, H01L 2120

Patent

active

057670200

ABSTRACT:
A method for preparing a semiconductor member comprises:

REFERENCES:
patent: 3645812 (1972-02-01), Sussmann
patent: 3962052 (1976-06-01), Abbas et al.
patent: 4014714 (1977-03-01), Murmann et al.
patent: 5070034 (1991-12-01), Satoh et al.
patent: 5277748 (1994-01-01), Sakaguchi et al.
patent: 5466631 (1995-11-01), Ichikawa et al.
patent: 5492859 (1996-02-01), Sakaguchi et al.
Journal of the Electrochemical Society, vol. 135, No. 8, Aug. 1988, pp. 2105-2107, "Fabrication of Silicon Microstructures Based on Selective Formation and Etching of Porous Silicon".
Extended Abstracts of the 20th (1988 International) Conference on Solid-State Devices and Materials 1988, pp. 33-36, A. Nakagawa et al., "500V Lateral Double Gate Bipolar-Mode Mosfet (DGIGBT) Dielectrically Isolated By Silicon Wafer Direct-Bonding (DISDB)".
Chem. Prum., vol. 27, No. 12, 1977, pp. 602-606, Sebek Svatopluk, "Chemical Etching of the Surface of Silicon Single Crystals", & Chemical Abstracts, vol. 88, No. 20, May 15, 1978, p. 595.
Patent Abstracts of Japan, vol. 14, No. 580 (E-1017), Dec. 25, 1992, & JP-A-02 252 265 (Sony), Oct. 11, 1990.
"Characterization of Porous Silicon by NRA, RBS, and Channeling"; Ortega et. al.; Nucl. Istrum. Methods Phys. Res., Sect. B, B45 (1-4); 1990; abstract only.
"Fundamental Selective Etching Characteristics For Gallium Arsenide"; Takebe et. al.; J. Electrochem. Soc., 140(4); abstract only; 1993.
Applied Physics Letters, vol. 57, No. 10, Sep. 1990, pp. 1046-1048, L. T. Canham, "Silicon Quantum Wire Array Fabrication By Electrochemical and Chemical Dissolution of Wafers".
IBM Technical Disclosures Bulletin, vol. 14, No. 11, Apr. 11, 1972, G.H. Schwuttke et al., "Etching of Vertical Walled Patterns in (100) Silicon".
Journal of the Electrochemical Society, vol. 114, No. 4, Apr. 1967, p. 114, S.M. Hu et al., "Observation of Etching of N-Type Silicon in Aqueous HF Solutions".
Journal of the Electrochemical Society, vol. 131, No. 3, Mar. 1984, pp. 672-674, L. Liou et al., "Amorphous Silicon Produced by Ion Implantation. Etching Rate in HF Solutions and Effect of Annealing".
R.P. Holmstrom et al., "Complete dielectric isolation by highly selective and self-stopping formation of oxidized porous silicon," Applied Physics Letters, vol. 42, No. 4, Feb. 15, 1983, pp. 386-388.
G. Bomchil et a., "Pore Size Distribution in Porous Silicon Studies by Adsorption Isotherms," Journal of the Electrochemical Society, vol. 130, No. 7, Jul. 1983, pp. 1611-1614.
K. Imai et al., "Crystalline Quality of Silicon Layer Formed by FIPOS Technology," Journal of Crystal Growth, vol. 63, No. 3, pp. 547-553.
A. Uhlir, Jr., Electrolytic Shaping of Geranium and Silicon, The Bell System Technical Journal, vol. XXXV, Mar. 1956, pp. 333-347.

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